The X-ray diffraction (XRD) studies for the two films were carried out by
PANalytical/X'pert PRO X-ray diffractometer. Cu-K radiation ( = 0.1540
nm) at 45 kV and 40mA was used. The 2 range (4 – 70o
) was chosen to cover
almost all the main diffraction patterns of the prepared films. Step scanning
with step size of 0.02o
(2θ) and scan speed 0.05 degree/second were used for
the entire 2-range. No peaks were observed for SiO2 and TiO2 thin films as
shown in Fig. 5.5 and Fig. 5.6, and amorphous structure can be observed, as
anticipated from the analysis of AFM and SEM images of these films